s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t n- ch an n el m osf et 2s k3402-z f e a tu r e s v d s s = 6 0 v i d = 3 6 a ( v g s = 1 0 v ) r d s ( o n ) 1 5 m ( v g s = 1 0 v ) r d s ( o n ) 2 2 m ( v g s = 4 v ) l o w c i s s : c i s s = 3 2 0 0 p f t y p . 2 . 3 0 . 6 0 + 0 . 1 - 0 . 1 6 . 5 0 + 0 . 1 5 - 0 . 1 5 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0 . 8 0 + 0 . 1 - 0 . 1 4 . 6 0 + 0 . 1 5 - 0 . 1 5 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5 . 3 0 + 0 . 2 - 0 . 2 2 . 3 0 + 0 . 1 - 0 . 1 0 . 5 0 + 0 . 8 - 0 . 7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0 . 1 2 7 m a x 3 . 8 0 to-252 u n i t : m m 1 gate 2 drain 3 source source body diode gate protection diode gate drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 6 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d 3 6 p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) i d m 1 4 4 s i n g l e a v a l a n c h e c u r r e n t ( n o t e . 2 ) i a s 3 5 4 0 1 s i n g l e a v a l a n c h e e n e r g y ( n o t e . 2 ) e a s 1 2 3 m j j u n c t i o n t e m p e r a t u r e t j 1 5 0 s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 v p d w p o w e r d i s s i p a t i o n a n o t e . 1 : p w 1 0 u s , d u t y c y c l e 1 % n o t e . 2 : s t a r t i n g t j = 2 5 c , v d d = 1 5 0 v , r g = 2 5 , v g s = 2 0 v 0 v t c = 2 5 t a = 2 5
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 6 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = 6 0 v , v g s = 0 v 1 0 ua g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 ua g a t e t o s o u r c e c u t - o f f v o l t a g e v g s ( o f f ) v d s = 1 0 v , i d = 1 m a 1 . 5 2 . 5 v v g s = 1 0 v , i d = 1 8 a 1 5 v g s = 4 v , i d = 1 8 a 2 2 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 0 v , i d = 1 8 a 1 3 2 7 s i n p u t c a p a c i t a n c e c i ss 3 2 0 0 o u t p u t c a p a c i t a n c e c o ss 5 2 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 2 7 0 t o t a l g a t e c h a r g e q g 6 1 g a t e s o u r c e c h a r g e q g s 8 . 2 g a t e d r a i n c h a r g e q g d 1 7 t u r n - o n d e l a y t i m e t d ( o n ) 3 6 t u r n - o n r i s e t i m e t r 3 1 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 7 0 t u r n - o f f f a l l t i m e t f 1 8 0 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 4 8 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 8 9 n c d i o d e f o r w a r d v o l t a g e v s d i f = 3 6 a , v g s = 0 v 1 v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) m n s v d d = 3 0 v , i d = 1 8 a , v g s = 1 0 v , r g = 1 0 v g s = 0 v , v d s = 1 0 v , f = 1 m h z v g s = 1 0 v , v d s = 4 8 v , i d = 3 6 a p f n c i f = 3 6 a , v g s = 0 , d i / d t = 1 0 0 a / s t y p i c a l ch a r a c te r i s i ti c s derating factor of forward bias safe operating area t ch - channel temperature - ?c dt - percentage of rated power - % 0 40 20 60 100 140 80 120 160 100 80 60 40 20 0 t c - case temperature - ?c p t - total power dissipation - w 0 0 80 20 40 60 100 140 120 160 total power dissipation vs. case temperature 10 20 30 40 50 70 60 n- ch an n el m osf et 2s k3402-z
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t t y p i c a l ch a r a c te r i s i ti c s pw - pulse width - s transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c / w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(ch-c) = 3.13?c/ w r th(ch-a) = 125?c/ w forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 10 1 0.1 100 0.1 1000 1 10 100 i d(pulse) r ds(on) limited (at v gs = 10 v) i d(dc) pw = 10 s 1 ms 10 ms dc p o w er dissipation limited t c = 25?c single pulse 100 s forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a pulsed 1 2 3 4 5 6 v ds = 10 v 1 0.1 0.01 10 100 t a = ? 55?c 25?c 75?c 150?c p u l s e d drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 2 3 4 80 200 160 120 1 0 v gs = 10 v 40 4.0 v forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s v ds = 10 v pulsed 0.01 0.1 1 10 100 10 10 0 0.01 0.1 1 t a = 150?c 75 ?c 25 ?c ? 55?c n- ch an n el m osf et 2s k3402-z
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . t y p i c a l ch a r a c te r i s i ti c s drain to source on-state resistance v s. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 2 4 6 8 10 12 14 16 18 20 40 50 0 20 10 30 i d = 18 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 100 10 1 5 10 15 20 25 30 35 40 1000 pulsed 0 v gs = 4.0 v 10 v gate to source threshold voltage vs. channel temperature t ch - channel temperature - ?c v gs(th) - gate to source threshold voltage - v 0.5 v ds = 10 v i d = 1 ma 1.0 1.5 2.0 2.5 3.0 ? 50 0 50 100 150 0 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m ? 0 ? 50 20 25 30 10 15 5 0 50 100 150 i d = 18 a 10 v v gs = 4.0 v pulsed source to drain diode forward voltage 1.0 i sd - diode forward current - a 1.5 v f(s-d) - body diode forward voltage - v 0.5 0 pulsed 0.1 1 10 100 1000 v gs = 0 v v gs = 10 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 1 0 0.1 1 0 0 10 0 0 100 0 0 1 10 100 v gs = 0 v f = 1 mhz c oss c rss c iss n- ch an n el m osf et 2s k3402-z
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t t y p i c a l ch a r a c te r i s i ti c s reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a / s v gs = 0 v 1 0.1 1 0 1 10 100 1000 1 0 0 dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 0 8 0 7 0 6 0 5 0 10 20 30 40 20 10 40 30 60 50 80 70 v ds 16 14 12 10 8 6 4 2 v gs i d = 36 a v dd = 48 v 30 v 12 v switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 1 0.1 100 1000 10 100 t f t r t d(on) t d(off) single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a 1 10 100 1 m 10 m v dd = 30 v r g = 25 ? v gs = 20 0 v i as = 35 a 10 100 0.1 e as = 123 mj single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy derating factor - % 25 50 75 100 160 140 120 100 80 60 40 20 0 125 150 v dd = 30 v r g = 25 ? v gs = 20 0 v i as 35 a n- ch an n el m osf et 2s k3402-z
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